Spin-Valve Memory Elements Using [{Co-Pt/Cu/Ni-Fe-Co}/Cu] Multilayers
- 1 April 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (4A) , L415
- https://doi.org/10.1143/jjap.34.l415
Abstract
A new type of magnetoresistive memory using spin-valve multilayers composed of semi-hard magnetic layers and soft magnetic layers separated with nonmagnetic layers was developed. The fabricated memory element was composed of a word line of Au film and a magnetoresistive sense line of [{CoPt/Cu/NiFeCo}/Cu] N multilayers. This spin-valve memory has nonvolatile and nondestructive readout properties.Keywords
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