Analysis of 0.1 to 0.3 micron wide, ultra dense GMR memory elements
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 30 (6) , 4650-4652
- https://doi.org/10.1109/20.334178
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- A high output mode for submicron M-R memory cellsIEEE Transactions on Magnetics, 1992
- 10-35 nanosecond magnetoresistive memoriesIEEE Transactions on Magnetics, 1990
- Analysis of M-R elements for 10/sup 8/ bit/cm/sup 2/ arraysIEEE Transactions on Magnetics, 1989
- 2-dimensional numerical analysis of laminated thin film elementsIEEE Transactions on Magnetics, 1988