Crystal growth, characterisation and resistivity measurements of Pd2Si single crystals

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Abstract
Single crystals of Pd2Si have been grown using a modified cold crucible Czochralski method. The crystals were characterised by X-ray diffraction analysis and density measurements. The resistivity has been measured as a function of temperature (10-1000 K) in the directions parallel (//) and perpendicular ( perpendicular to ) to the c axis of the hexagonal structure Pd2Si behaves like a metallic compound with an anisotropy sigma / sigma perpendicular to =1.6 at 293 K (referring to the c-axis direction) and a residual resistivity ratio in the range 130 to 210. The parallel-resistor model has been successfully used to interpret the resistivity data.