RF measurements and characterization of heterostructure field-effect transistors at low temperatures
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 37 (9) , 1380-1388
- https://doi.org/10.1109/22.32221
Abstract
No abstract availableKeywords
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