Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopy
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 596-600
- https://doi.org/10.1016/0022-0248(93)90691-o
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- (InAs) 1 /(GaAs) 4 Superlattice strained quantum well laser at 980 nmElectronics Letters, 1991
- Atomic layer molecular beam epitaxy (Almbe) of III?V compounds: Growth modes and applicationsApplied Physics A, 1989
- X-ray interference in ultrathin epitaxial layers: A versatile method for the structural analysis of single quantum wells and heterointerfacesPhysical Review B, 1989
- The effects of elastic relaxation on transmission electron microscopy studies of thinned composition-modulated materialsJournal of Vacuum Science & Technology B, 1986