Photoluminescence of excitons bound at Te isoelectronic traps in ZnSe
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4) , 552-557
- https://doi.org/10.1016/0022-0248(90)90774-f
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Exciton self-trapping in ZnSe-ZnTe alloysPhysical Review Letters, 1987
- Optical bowing in zinc chalcogenide semiconductor alloysPhysical Review B, 1986
- Energy transfer processes between Ten centres in ZnS:Te and CdS:TePhysica Status Solidi (b), 1986
- Blue light emission from ZnSe p-n junctionsJournal of Applied Physics, 1985
- Localized Excitons in CdS1−xSex Solid SolutionsPhysica Status Solidi (b), 1982
- Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductorPhysical Review B, 1982
- Isoelectronic Impurity Te in CdS1−xSex Mixed CrystalsPhysica Status Solidi (b), 1982
- CdS1−xTex as Persistence‐type Semiconductor Mixed CrystalsPhysica Status Solidi (b), 1981
- Reflectivity ofSingle CrystalsPhysical Review B, 1972
- Isoelectronic Oxygen Trap in ZnTePhysical Review B, 1968