Lifetime of the Stark resonant level in double-barrier structures
- 15 May 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (14) , 12042-12044
- https://doi.org/10.1103/physrevb.43.12042
Abstract
We present an exact numerical calculation for the energy level and the Stark resonance width of the lowest quasibound state in the double-barrier structure with an applied electric field by solving the Schrödinger equation directly. Our results clearly demonstrate the effect of the applied electric field on both the energy level and the resonance width, which has so far been ignored. Our results predict a rapid decrease of the resonant-level lifetime with increasing electric field. The dependence of our results on the barrier width is also discussed.Keywords
This publication has 11 references indexed in Scilit:
- Resonant level lifetime in GaAs/AlGaAs double-barrier structuresApplied Physics Letters, 1987
- Tunneling of electrons in quantum wells with indirect gap semiconductor barriersSolid State Communications, 1987
- Observation of intrinsic bistability in resonant tunneling structuresPhysical Review Letters, 1987
- Tunneling through semiconductor heterojunction barriersSolid State Communications, 1987
- Exact calculations of quasibound states of an isolated quantum well with uniform electric field: Quantum-well stark resonancePhysical Review B, 1986
- Electric field induced shifts and lifetimes in GaAs-GaAlAs quantum wellsApplied Physics Letters, 1985
- Electronic structure of an isolated GaAs-GaAlAs quantum well in a strong electric fieldPhysical Review B, 1985
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970