Single-event-induced charge collection and direct channel conduction in submicron MOSFETs

1 December 1994

journal article
conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 41 (6) , 2103-2111
https://doi.org/10.1109/23.340549

Abstract

The single-event (SE) charge collection of an n-channel submicron MOSFET is described using three dimensional device simulations. Ion hits in the drain and in the channel region are considered. For submicron MOSFETs, we show simulation evidence that there may exist a direct source-drain conduction process induced by the ion, called ion-triggered channeling (ITC), which may be an important SE upset mechanism in deep submicron scaling. The further study of increased ion-track-length to device-gate-length ratios indicate that the direct source-drain conduction process assumes increased importance for increased scaling.

Keywords

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