Single event induced charge transport modeling of GaAs MESFETs
Open Access
- 1 December 1993
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (6) , 1867-1871
- https://doi.org/10.1109/23.273468
Abstract
Two-dimensional computer simulations of charge collection phenomena in GaAs MESFETs have been performed for alpha and laser ionization. In both cases more charge is collected than is created by the ionizing event. The simulations indicate that a bipolar transport mechanism (t < 60 ps) and a channel modulation mechanism (t > 40 ps) are responsible for this enhanced charge collection.This publication has 13 references indexed in Scilit:
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