Single-event upset in GaAs E/D MESFET logic
- 1 December 1990
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 37 (6) , 1894-1901
- https://doi.org/10.1109/23.101206
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- A bipolar mechanism for alpha-particle-induced soft errors in GaAs integrated circuitsIEEE Transactions on Electron Devices, 1989
- Improvement of alpha-particle-induced soft-error immunity in a GaAs SRAM by a buried p-layerIEEE Transactions on Electron Devices, 1988
- Intrinsic SEU Reduction from Use of Heterojunctions in Gallium Arsenide Bipolar CircuitsIEEE Transactions on Nuclear Science, 1987
- Experimental and Theoretical Study of Alpha Particle Induced Charge Collection in GaAs FETSIEEE Transactions on Nuclear Science, 1987
- Comparisons of Single Event Vulnerability of GaAs SRAMSIEEE Transactions on Nuclear Science, 1986
- Gate Charge Collection and Induced Drain Current in GaAs FETsIEEE Transactions on Nuclear Science, 1985
- Charge Collection in Ga/Aa Test StructuresIEEE Transactions on Nuclear Science, 1984
- SEU of Complementary GaAs Static Rams Due to Heavy IonsIEEE Transactions on Nuclear Science, 1984
- Charge Collection Measurements on GaAs Devices Fabricated on Semi-Insulating SubstratesIEEE Transactions on Nuclear Science, 1984
- Measurements of Alpha-Particle-Induced Charge in GaAs DevicesIEEE Transactions on Nuclear Science, 1983