Vertical Microcavity Lasers with InGaAs/GaAs Quantum Dots Formed by Spinodal Phase Separation
- 1 March 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (3B) , L357-360
- https://doi.org/10.1143/jjap.36.l357
Abstract
We report the growth, characterization and lasing of vertical microcavity lasers with an active layer of self-organized InGaAs/GaAs quantum dots. The quantum dots are formed by spinodal phase separation in low-In-content (x=0.03) In x Ga1- x As epilayers deposited with decreasing growth temperature in a hot-wall metalorganic chemical vapor deposition reactor. Optical transitions involving ground and excited states of the quantum dots were investigated using photoluminescence at moderately high excitation densities. Lasing oscillation was observed at 77 K by optical pumping. The coupling parameter β of the spontaneous emission into the lasing mode was estimated to be ∼8×10-3.Keywords
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