Low-energy-electron loss spectroscopy of ZnTe (110) and (111) surfaces. II. Oxidation properties
- 15 October 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 18 (8) , 4341-4347
- https://doi.org/10.1103/physrevb.18.4341
Abstract
The oxidation properties of ZnTe (110) and (111) surfaces have been studied by low-energy-electron loss spectroscopy and Auger-electron spectroscopy. Oxygen adsorption of about half-monolayer coverage was observed at an exposure of L of molecular oxygen, for both ordered (110) and (111) surfaces. Electronbeam irradiation drastically stimulated oxidation and oxygen adsorption larger than one-monolayer coverage occurred. Loss spectra of the oxygen-contamined surfaces exhibit an oxygen-derived surface state lying ∼ 0.3 eV above the valence-band maximum, probably within the band-gap region, for the surface with adsorbed oxygen, and a Zn- core-level loss due to ZnO and a Te- core-level loss due to Te for the heavily oxidized surface. This finding implies that both zinc and tellurium oxides are involved in the oxidation of ZnTe. The chemical compositions of the clean and oxidized surfaces are discussed by using a layer model.
Keywords
This publication has 16 references indexed in Scilit:
- Low-energy-electron loss spectroscopy of ZnTe (110) and (111) surfaces. I. Bulk and surface lossesPhysical Review B, 1978
- Zn 3d core-level transition in electron-energy-loss spectroscopy of ZnO: Comparison with a Zn 3d loss of clean and oxidized ZnSe(111) surfacesSurface Science, 1978
- Low-energy electron-loss spectroscopy of a ZnSe(111) surfacePhysical Review B, 1977
- Composition, structure, surface states, and O2 sticking coefficient for differently prepared GaAs(111)As surfacesSurface Science, 1977
- The oxidation of the GaAs (110) surfaceSolid State Communications, 1977
- Electronic structure of cleaved clean and oxygen-covered GaAs (110) surfacesPhysical Review B, 1977
- Electronic surface properties of III–V semiconductors: Excitonic effects, band-bending effects, and interactions with Au and O adsorbate layersJournal of Vacuum Science and Technology, 1976
- (110) surface states in III-V and II-VI zinc-blende semiconductorsPhysical Review B, 1976
- Intrinsic (111) surface states of Ge, GaAs, and ZnSePhysical Review B, 1975
- Clean Te surfaces studied by LEEDSurface Science, 1968