Defect Distribution and Bonding Structure in High Band Gap a-Si_1−xC_x:H Films Deposited in H₂ Dilution

This publication has 12 references indexed in Scilit:

• The influence of hydrogen dilution on the optoelectronic and structural properties of hydrogenated amorphous silicon carbide films
  Philosophical Magazine Part B, 1994
• A new modular multichamber plasma enhanced chemical vapor deposition system
  Applied Surface Science, 1993
• The electronic and atomic structure of hydrogenated amorphous Si—C alloys
  Philosophical Magazine Part B, 1992
• Influence of hydrogen dilution on the optoelectronic properties of glow discharge amorphous silicon carbon alloys
  Journal of Applied Physics, 1992
• CORRELATION BETWEEN OPTICAL DEFECT DENSITY AND SPIN DENSITY IN AMORPHOUS SILICON CARBIDE
  Modern Physics Letters B, 1991
• Electron spin resonance and photoacoustic spectroscopy of a-CSi:H and a-SiGe:H alloys
  Thin Solid Films, 1990
• The structural, chemical and compositional nature of amorphous silicon carbide films
  Philosophical Magazine Part B, 1990
• Guiding principle for preparing highly photosensitive Si-based amorphous alloys
  Journal of Non-Crystalline Solids, 1987
• Physics of Amorphous Silicon–Carbon Alloys
  Physica Status Solidi (b), 1987
• Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
  Physical Review B, 1982