The structural, chemical and compositional nature of amorphous silicon carbide films
- 20 August 1990
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 62 (2) , 193-212
- https://doi.org/10.1080/13642819008226986
Abstract
A range of amorphous hydrogenated silicon-carbide films have been produced using the plasma-enhanced chemical-vapour deposition technique with silane and methane diluted in hydrogen as the parent molecules. The air-exposed and sputter-cleaned surfaces of these films have been investigated by means of X-ray photoelectron spectroscopy. Auger electron spectroscopy, secondary-ion mass spectrometry, Raman spectroscopy and reflection-electron diffraction. The structural and chemical nature of the films has been determined as a function of the methane: silane ratio by a combination of the above techniques. X-ray photoelectron spectroscopy and Auger electron spectroscopy have been used to determine the carbon content of the films also as a function of the methane: silane ratio.Keywords
This publication has 19 references indexed in Scilit:
- Electronic and optical properties of a-Si1-xCx films prepared from a H2-diluted mixture of SiH4 and CH4Philosophical Magazine Part B, 1990
- Quantification of amorphous SiC: H films using XPS and AES with three standardsSurface and Interface Analysis, 1989
- On the differences between a-SiC:H films deposited with and without fluorineJournal of Non-Crystalline Solids, 1985
- Chapter 6 Raman Scattering of Amorphous Si, Ge, and Their AlloysPublished by Elsevier ,1984
- Valence band structure of hydrogenated amorphous silicon-carbon alloys studied by photoelectron spectroscopyPhysica B+C, 1983
- X-ray photoelectron spectroscopy and Raman spectroscopy investigations of amorphous SixC1x(H) coatings obtained by chemical vapour deposition from thermally labile organosilicon compoundsThin Solid Films, 1983
- XPS, AES and friction studies of single-crystal silicon carbideApplications of Surface Science, 1982
- Plasma spectroscopy—Glow discharge deposition of hydrogenated amorphous siliconThin Solid Films, 1982
- Reactive plasma deposited SixCyHz filmsThin Solid Films, 1979
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge techniquePhilosophical Magazine, 1977