Quantification of amorphous SiC: H films using XPS and AES with three standards

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Abstract
Quantification has been achieved on a range of a‐SiC: H films using the techniques of XPS and AES. The procedure of quantification, involving the use of three standards, four matrix factors and an effective matrix factor, is given. These results are compared with results from standless techniques. The correlation between matrix factors, local atomic bonding configurations and the effect on the deduced composition are discussed. Recommendations are made concerning the use of various quantification methods, and their inherent errors are discussed.