Medium-energy ion scattering studies of two-dimensional rare-earth silicides
- 15 February 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (8) , 5707-5713
- https://doi.org/10.1103/physrevb.61.5707
Abstract
Medium-energy ion scattering (MEIS) has been used to determine the atomic structure of two-dimensional (2D) rare-earth silicides on Si(111). In the case of the Si(111)1×1-Er 2D silicide surface, the MEIS results refine previously published results, but in the case of the Si(111)1×1-Ho surface, this work represents to our knowledge the first full quantitative structural analysis that reveals a structure similar to that of the Si(111)1×1-Er surface and directly supports a model in which a rare-earth monolayer resides below a Si bilayer close to bulklike termination.Keywords
This publication has 20 references indexed in Scilit:
- Buckling reversal of the Si(111) bilayer termination of 2-dimensional ErSi 2 upon H dosingEurophysics Letters, 1997
- Atomic structure and thermal stability of two-dimensional Er silicide on Si(111)Physical Review B, 1996
- Interaction of H with epitaxial Er silicide layers on Si(111): adsorption versus absorptionSurface Science, 1996
- Interfacial structure of two-dimensional epitaxial Er silicide on Si(111)Physical Review B, 1994
- Epitaxial Er silicide formation on Si(111) in the monolayer rangeApplied Surface Science, 1993
- A photoemission study of erbium silicide ultra-thin films epitaxially grown on Si(111)Applied Surface Science, 1993
- Structure of a two-dimensional epitaxial Er silicide on Si(111) investigated by Auger-electron diffractionPhysical Review B, 1993
- Growth of a two-dimensional Er silicide on Si(111)Physical Review B, 1992
- The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type siliconApplied Physics Letters, 1981
- Low Schottky barrier of rare-earth silicide on n-SiApplied Physics Letters, 1981