Analogue/Digital dual power module using ion-implanted GaAs MESFETs
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 567-570 vol.2
- https://doi.org/10.1109/mwsym.1995.406023
Abstract
An analogue and digital dual power module using ion-implanted GaAs MESFETs with high breakdown voltage has been developed for North American Digital Cellular (NADC). In the analogue operation, the module exhibited high power-added efficiency (PAE) of 56.0% at Vdd=3.7 V. In the digital operation, the high efficiency of 46.9% and the low adjacent channel leakage power (Padj) of -29.1 dBc at +30 kHz Padj and of -52.7 dBc at +60 kHz Padj were simultaneously obtained at f=836.5 MHz, Pout=31.0 dBm and Vdd=4.7 V. This device is quite suitable for the dual mode application.<>Keywords
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