Efficient defect passivation by hot-wire hydrogenation
- 13 October 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (15) , 2169-2171
- https://doi.org/10.1063/1.119371
Abstract
Atomic hydrogen, produced at a hot wire, passivates bulk defects in polycrystalline silicon without damaging surface regions. Solar cells from such polycrystalline silicon respond much more favorably to hot-wire hydrogenation than to low-energy ion implantation or a direct-current plasma treatment. Hot-wire passivation yields a hydrogen concentration close to the surface of 8×1019 cm−3 and improves the minority carrier diffusion length of solar cells by up to 100%. Implantation as well as conventional plasma treatment result in lower hydrogen concentration and, consequently, in much smaller improvements of diffusion lengths.Keywords
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