Large improvement in HgCdTe photovoltaic detector performances at LETI
- 1 August 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (8) , 1027-1032
- https://doi.org/10.1007/bf02817520
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Performance of p+−n HgCdTe photodiodesInfrared Physics, 1992
- HgCdTe infrared diode arraysSemiconductor Science and Technology, 1991
- Mercury cadmium telluride junctions grown by liquid phase epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Growth and characterization of P-on-n HgCdTe liquid-phase epitaxy heterojunction material for 11–18 μm applicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Infrared image sensorsOptical Engineering, 1991
- Analysis of the R0A product in n+-p Hg1−xCdxTe photodiodesInfrared Physics, 1988
- State of the art of LPE HgCdTe at LIRJournal of Crystal Growth, 1988
- Defects, diffusion and activation in ion implanted HgCdTeJournal of Crystal Growth, 1988
- Electrical doping of HgCdTe by ion implantation and heat treatmentJournal of Crystal Growth, 1988