Ion beam induced oxidation of silicon
- 7 November 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (19) , 1838-1840
- https://doi.org/10.1063/1.100370
Abstract
A new physical phenomenon causing oxidation of silicon has been observed. The phenomenon is controlled by the impact of an energetic ion beam on a clean silicon target exposed to low‐pressure oxygen. An oxide layer of 50–100 Å can be formed at room temperature by properly choosing the oxidation conditions. The growth was studied in situ by measuring the ion‐induced secondary electron yield. A strong dependence on oxygen pressure and target temperature was observed. By studying the oxide with x‐ray photoelectron spectroscopy, it was concluded that the film formed is stoichiometric SiO2 . A discussion on possible growth mechanisms is carried out in terms of ion energy deposition.Keywords
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