Oxygen Adsorption on Silicon and Germanium

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Abstract
Data are presented which yield relative magnitudes of the initial, room‐temperature sticking probabilities S0 of nitrogen on clean tungsten and oxygen on clean silicon and germanium. Taking S0 to be 0.35 for N2 on W, we obtain 1×10−2 and 8×10−4 for S0 of O2 on Si and Ge, respectively. Data are also given concerning the temperatures at which the atomically clean surface is thermally regenerated from the oxygenated surface for both Si and Ge.