Photodarkening and microcrystallite size in colored filter glasses
- 30 September 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (14) , 1690-1692
- https://doi.org/10.1063/1.106219
Abstract
It is demonstrated for the first time that photodarkening in colored filter glasses is associated with apparent growth of CdSxSe1−x microcrystallites. This is thought to be due to the attraction of impurity ions around the microcrystallites. Both a Q‐switched Nd3+:YAG laser and a hybrid mode‐locked dye laser are used as the light sources. Microcrystallite growth is directly observed by transmission electron microscopy and by field‐emission scanning electron microscopy. Growth is also inferred from local changes in color and measured absorption spectra.Keywords
This publication has 12 references indexed in Scilit:
- Microcrystallite size dependence of absorption and photoluminescence spectra in CdSxSe1−x-doped glassApplied Physics Letters, 1989
- Nonlinear transmission, degenerate four-wave mixing, photodarkening, and the effects of carrier-density-dependent nonlinearities in semiconductor-doped glassesJournal of the Optical Society of America B, 1989
- Absorption saturation and photodarkening in semiconductor-doped glassesApplied Physics Letters, 1989
- Quantum size effects and observation of microcrystallites in colored filter glassesApplied Physics Letters, 1989
- Nonlinear dynamical relaxation processes in semiconductor-doped glasses at liquid-nitrogen temperatureJournal of the Optical Society of America B, 1989
- Laser annealing effect on carrier recombination time in CdSXSe_1–X-doped glassesJournal of the Optical Society of America B, 1988
- Time-resolved direct observation of Auger recombination in semiconductor-doped glassesApplied Physics Letters, 1987
- New results on optical phase conjugation in semiconductor-doped glassesJournal of the Optical Society of America B, 1987
- Luminescence and photophysics of cadmium sulfide semiconductor clusters: the nature of the emitting electronic stateThe Journal of Physical Chemistry, 1986
- Anomalous surface transformations in crystalline silicon induced by subpicosecond laser pulsesApplied Physics Letters, 1986