Annealing characteristics and thermal stability of electron beam evaporated ruthenium Schottky contacts to n-GaAs
- 3 February 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (5) , 604-606
- https://doi.org/10.1063/1.106567
Abstract
High quality ruthenium Schottky barrier diodes were fabricated on epitaxially grown n‐GaAs, by the electron beam evaporation of Ru. Annealing studies were carried out in vacuum and in air. The effective barrier height and the flatband barrier height of the as‐deposited Schottky contacts were 0.86 and 0.91 eV, respectively. These barrier heights reached their respective maximum values of 0.93 and 0.96 eV, after annealing at 450 °C in vacuum. The electrical characteristics of a third set of contacts, which was subjected to prolonged (1000 min) annealing at 400 °C in vacuum, showed no measureable signs of degradation.Keywords
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