Barrier heights to silicon, of ruthenium and its silicide
- 1 July 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (7) , 5352-5353
- https://doi.org/10.1063/1.329889
Abstract
The Schottky barrier height between as-deposited, as well as heat-treated samples of Ru metal deposited onto n-type silicon was determined, using forward IV data and photoelectric response measurements. When no silicide formation was observed (using Rutherford backscattering analysis) a barrier height of φBo = 0.79±0.01 eV was found. Where heat treatment resulted in formation of RuSi1.5 (reported to be semiconducting), the barrier height varied in the range 0.70– 0.74 eV. We included recent barrier-height data for the other 4d-series elements with our results and found a trend of increase of barrier height with work function, similar to that found for the 5d series.This publication has 9 references indexed in Scilit:
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