Characterization of Mbe GaAs Layers Grown at 200°C–300°C
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Nondestructive Characterization Of MOCVD-Grown GaInAs/GaAs Using Rocking Curve And TopographyPublished by SPIE-Intl Soc Optical Eng ,1988
- Phonon shifts in ion bombarded GaAs: Raman measurementsSolid State Communications, 1987
- Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAsElectronics Letters, 1980
- The optical and electrical effects of high concentrations of defects in irradiated crystalline gallium arsenideAdvances in Physics, 1975