Ion-induced fluorination in electron cyclotron resonance etching of silicon studied by x-ray photoelectron spectroscopy
- 28 December 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (26) , 3136-3138
- https://doi.org/10.1063/1.107985
Abstract
X‐ray photoelectron spectroscopy has been used to investigate the effect of varying substrate bias when silicon is etched in a CF4 electron cyclotron resonance plasma. After etching, the silicon surface is found to be covered by a two layer structure consisting of damaged, fluorinated silicon and a fluorocarbon overlayer. The thickness of the fluorinated silicon layer depends on the self‐bias voltage. Reduction of the ion energy leads to a thinner fluorinated layer as well as a lower etch rate, suggesting that damage and fluorination of the crystal lattice are important in the ion enhanced etching of silicon in fluorine containing plasmas.Keywords
This publication has 10 references indexed in Scilit:
- Surface science aspects of etching reactionsSurface Science Reports, 1992
- Nonintrusive wafer temperature measurement using in situ ellipsometryJournal of Applied Physics, 1991
- X-ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etchingApplied Physics Letters, 1990
- Near‐surface damage and contamination of silicon following electron cyclotron resonance etchingJournal of Vacuum Science & Technology A, 1990
- Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanismsJournal of Vacuum Science & Technology A, 1987
- Mechanism of the Slow-Down of the Silicon Etch Rate by a Fluorocarbon Overlayer in CF4/H2 Reactive Ion Etching of SiliconMRS Proceedings, 1987
- Soft X-ray photoemission study of the silicon-fluorine etching reactionSurface Science, 1986
- Formation of a silicon-carbide layer during CF4/H2 dry etching of SiApplied Physics Letters, 1985
- Synchrotron photoemission investigation of the initial stages of fluorine attack on Si surfaces: Relative abundance of fluorosilyl speciesPhysical Review B, 1984
- Photoelectron spectra of fluorinated amorphous silicon (-Si: F)Physical Review B, 1981