Thermoelectric transport in two-dimensional disordered systems

Publisher Website
Google Scholar
Abstract
We present evidence for the observation of localization and interaction corrections to the thermoelectric coefficient η relating current flow to applied temperature gradient, using the two-dimensional electron gas of a silicon-on-sapphire metal-oxide-semiconductor field-effect transistor as a test system. The present state of the theory of such corrections is discussed in detail, including effects such as phonon drag and phonon renormalization. The experimental apparatus which we use to measure η as a function of magnetic field is then described. In a perpendicular magnetic field we observe an increase in the magnitude of η which is explained in terms of suppression of quantum interference effects by the field: we find good agreement between experiment and theory. For a parallel magnetic field we are able to show that there is a nonzero interaction correction to η, and we put bounds on the size of this effect.

This publication has 45 references indexed in Scilit: