Self-organization of (In,Ga)As/GaAs quantum dots on relaxed (In,Ga)As films

This publication has 18 references indexed in Scilit:

• Erratum: “Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy” [J. Appl. Phys. 81, 1905 (1997)]
  Journal of Applied Physics, 1997
• Tuning self-assembled InAs quantum dots by rapid thermal annealing
  Applied Physics Letters, 1997
• Self-organized growth of quantum-dot structures
  Semiconductor Science and Technology, 1996
• Normal incident infrared absorption from InGaAs/GaAsquantum dot superlattice
  Electronics Letters, 1996
• Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
  Applied Physics Letters, 1996
• 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
  Applied Physics Letters, 1995
• Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
  Physical Review Letters, 1995
• Self-Formed In_0.5Ga_0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µm
  Japanese Journal of Applied Physics, 1994
• Residual strain analysis of InxGa1−xAs/GaAs heteroepitaxial layers
  Applied Physics Letters, 1992
• Use of misfit strain to remove dislocations from epitaxial thin films
  Thin Solid Films, 1976