High-speed integrated heterojunction field-effect transistor photodetector: A gated photodetector
- 15 June 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (24) , 1754-1756
- https://doi.org/10.1063/1.97737
Abstract
A new concept for a high‐speed photodetector is described which promises very low noise with avalanche gain. The detector is constructed as an integrated circuit element in the heterojunction field‐effect transistor technology and utilizes a unique n‐n heterojunction interface formed by either metalorganic chemical vapor deposition or molecular beam epitaxy growth techniques. The degree of avalanching is controlled via an electrical third terminal.Keywords
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