Electronic states at the interface between thin films of ZnS and crystalline p-silicon
- 15 August 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (4) , 1340-1343
- https://doi.org/10.1063/1.339635
Abstract
Thin films of zinc sulfide have been evaporated onto p−‐p+ silicon substrates and metal‐insulator‐semiconductor diodes fabricated. Capacitance‐voltage characteristics have been analyzed qualitatively and quantitative measurement of the density of interface states has been made using the conductance technique developed by Nicollian and Goetzberger [Bell Syst. Tech. J. 4 6, 1055 (1967)]. Similarities between this interface and that between sputtered zinc sulfide are noted. A model is developed to explain the high densities of interface states observed (≥1012 cm−2 eV−1) and the suitability of these films for use in electroluminescent devices is discussed.This publication has 12 references indexed in Scilit:
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