Density of states at the interface between semi-insulating polycrystalline and single crystal silicon
- 15 September 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (6) , 1881-1883
- https://doi.org/10.1063/1.334178
Abstract
C-V and G-V measurements have been carried out on metal/semi-insulating polycrystalline silicon (SIPOS)/silicon structures. From the results a density-of-states curve for the SIPOS/silicon interface was constructed. The density of interface states can be as high as ∼1×1013 cm−2 eV−1, but falling to ∼3×1011 cm−2 eV−1 at about 0.1 eV from midgap.This publication has 8 references indexed in Scilit:
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