Temperature programmed desorption study of GaAs(100)−c(4×4) and As4 exposed (2×4) surfaces
- 1 April 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 265 (1-3) , L239-L244
- https://doi.org/10.1016/0039-6028(92)90481-k
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyPhysical Review B, 1990
- Structure of in-situ grown GaAs(001) reconstructed surfaces by grazing incidence X-ray diffractionSurface Science, 1989
- Fractional Stoichiometry of the GaAs(001)Surface: AnIn-SituX-Ray Scattering StudyPhysical Review Letters, 1989
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- : A chemisorbed structurePhysical Review B, 1983
- Angle-resolved photoemission studies of GaAs(100) surfaces grown by molecular-beam epitaxyPhysical Review B, 1983
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam techniqueJournal of Physics and Chemistry of Solids, 1973
- Adsorption State of Hydrogen on MetalsJournal of Vacuum Science and Technology, 1972