Structure of in-situ grown GaAs(001) reconstructed surfaces by grazing incidence X-ray diffraction
- 1 April 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 211-212, 39-47
- https://doi.org/10.1016/0039-6028(89)90751-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- Surface structure of As-stabilized GaAs(001): 2×4,c(2×8), and domain structuresPhysical Review B, 1988
- Crystal truncation rods and surface roughnessPhysical Review B, 1986
- Model-Independent Structure Determination of the InSb(111)2×2 Surface with Use of Synchrotron X-Ray DiffractionPhysical Review Letters, 1985
- Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfacesPhysical Review B, 1984
- Angle-resolved photoemission studies of GaAs(100) surfaces grown by molecular-beam epitaxyPhysical Review B, 1983
- Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculationsPhysical Review B, 1982
- Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBESurface Science, 1980
- Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AESSurface Science, 1978
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) FaceJournal of Applied Physics, 1971