Role of point defects in the transient diffusion and clustering of implanted boron in silicon
- 31 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 4 (1-4) , 101-105
- https://doi.org/10.1016/0921-5107(89)90224-9
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Point defects and dopant diffusion in siliconReviews of Modern Physics, 1989
- Anomalous transient diffusion of ion implanted dopants: A phenomenological modelNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- General model for intrinsic dopant diffusion in silicon under nonequilibrium point-defect conditionsJournal of Applied Physics, 1988
- Rapid isothermal processingJournal of Applied Physics, 1988
- Transient boron diffusion in ion-implanted crystalline and amorphous siliconJournal of Applied Physics, 1988
- Implantation damage and the anomalous transient diffusion of ion-implanted boronApplied Physics Letters, 1987
- Rapid annealing and the anomalous diffusion of ion implanted boron into siliconApplied Physics Letters, 1987
- Formation of stable dopant interstitials during ion implantation of siliconJournal of Materials Research, 1986
- Modeling Rapid Thermal Diffusion of Arsenic and Boron in SiliconJournal of the Electrochemical Society, 1984
- Influence of annealing on the concentration profiles of boron implantations in siliconApplied Physics A, 1973