General model for intrinsic dopant diffusion in silicon under nonequilibrium point-defect conditions
- 1 November 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (9) , 4484-4490
- https://doi.org/10.1063/1.341273
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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