Hydrogen-boron interactions in-type diamond
- 15 September 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (12) , 7966-7969
- https://doi.org/10.1103/physrevb.58.7966
Abstract
We report on experimental evidence of hydrogen-boron interactions in boron-doped diamond from hydrogen diffusion investigations. Original deuterium diffusion studies in homoepitaxial B-doped diamond films reveal that hydrogen diffusion is limited by the B concentration with a low effective diffusion activation energy. These results are consistent with hydrogen ionization and diffusion of fairly mobile that form pairs with Infrared spectroscopy experiments show that boron acceptor electronic transitions are removed under hydrogenation.
Keywords
This publication has 18 references indexed in Scilit:
- Hydrogen Molecules in Crystalline Silicon Treated with Atomic HydrogenPhysical Review Letters, 1996
- Hydrogen-Dopant Interactins in Crystalline SemiconductorsDefect and Diffusion Forum, 1996
- Hydrogen-related defects in crystalline semiconductors: a theorist's perspectiveMaterials Science and Engineering: R: Reports, 1995
- Hydrogen and hydrogen dimers inc-C, Si, Ge, and α-SnPhysical Review B, 1994
- The migration of interstitial H in diamond and its pairing with substitutional B and N: Molecular orbital theoryJournal of Materials Research, 1994
- defect in crystalline siliconPhysical Review Letters, 1993
- Trap-limited hydrogen diffusion in doped siliconPhysical Review B, 1990
- Hydrogen in diamondJournal of Physics C: Solid State Physics, 1988
- State and motion of hydrogen in crystalline siliconPhysical Review B, 1988
- Electrical Transport Studies of the Hydrogen-Related Compensating Donor in B-Doped Silicon DiodesMRS Proceedings, 1985