High-resolution transmission electron microscopy of vicinal AlAs/GaAs interfacial structure
- 5 April 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (14) , 1632-1634
- https://doi.org/10.1063/1.108609
Abstract
AlAs-on-GaAs vicinal interfaces grown by molecular beam epitaxy were investigated by high-resolution transmission electron microscopy in the 〈110〉 cross section, and the interfacial step structures were clearly observed. For the first time, distinctly different step interval distributions are found for interfaces tilted 2° from (001) towards (111)A and towards (111)B. Step bunching is observed for A steps, while a regular array of steps is observed for B steps. The edges of A steps are also straighter than those of B steps.Keywords
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