Lateral modes of broad area semiconductor lasers: theory and experiment
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 27 (3) , 312-320
- https://doi.org/10.1109/3.81329
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- High-power operation of highly reliable narrow stripe pseudomorphic single quantum well lasers emitting at 980 nmIEEE Photonics Technology Letters, 1990
- Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiencyApplied Physics Letters, 1989
- Linewidth enhancement factor in strained quantum well lasersIEEE Photonics Technology Letters, 1989
- Mode control in broad-area diode lasers by thermally induced lateral index tailoringApplied Physics Letters, 1988
- A model for GRIN-SCH-SQW diode lasersIEEE Journal of Quantum Electronics, 1988
- High-power (710 mW cw) single-lobe operation of broad area AlGaAs double heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Lateral coherence properties of broad-area semiconductor quantum well lasersJournal of Applied Physics, 1986
- Intermodal stability of a coupled-cavity semiconductor laserIEEE Journal of Quantum Electronics, 1986
- High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxyElectronics Letters, 1986
- Resonant Modes in a Maser InterferometerBell System Technical Journal, 1961