Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution
- 5 July 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (1) , 85-87
- https://doi.org/10.1063/1.124284
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasingSolid-State Electronics, 1996
- In-situ growth of quantum dot structures by the Stranski-Krastanow growth modeProgress in Crystal Growth and Characterization of Materials, 1996
- Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)IEEE Photonics Technology Letters, 1996
- Room-temperature operation of In 0.4 Ga 0.6 As/GaAsself-organised quantum dot lasersElectronics Letters, 1996
- Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAsApplied Physics Letters, 1995
- Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fieldsJournal of Crystal Growth, 1995
- Optical investigation of the self-organized growth of InAs/GaAs quantum boxesJournal of Crystal Growth, 1995
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)Applied Physics Letters, 1990