Characterization of Amorphous Silicon Deposited at high rate by Helium Dilution PECVD and used for Applications in Radiation Detection

This publication has 7 references indexed in Scilit:

• Thin-film semiconductors: new materials for future detectors
  Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1992
• Hydrogen, microstructure and defect density in hydrogenated amorphous silicon
  Journal de Physique I, 1992
• Response of amorphous silicon p-i-n detectors to ionizing particles
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
• Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias
  Journal of Applied Physics, 1991
• Helium Dilution as a Means to Obtain a Low Defect Density Hydrogenated Amorphous Silicon at High Deposition Rates in RF Glow-Discharge Systems
  Published by Springer Nature ,1991
• A new treatment of Schottky barrier capacitance-voltage characteristics: Discussion of usual assumptions and determination of the deep gap states density in a-Si1−xGex:H alloys
  Journal of Non-Crystalline Solids, 1989
• a-Si:H Deposition from SiH₄and Si₂H₆rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge Transition
  Japanese Journal of Applied Physics, 1988