Helium Dilution as a Means to Obtain a Low Defect Density Hydrogenated Amorphous Silicon at High Deposition Rates in RF Glow-Discharge Systems
- 1 January 1991
- conference paper
- Published by Springer Nature
- p. 1083-1086
- https://doi.org/10.1007/978-94-011-3622-8_277
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate biasJournal of Applied Physics, 1991
- Ellipsometric study of a-Si:H thin films deposited by square wave modulated rf glow dischargeJournal of Applied Physics, 1991
- Studies by photothermal deflection spectroscopy of defect formation in a-Si:HPhilosophical Magazine Part B, 1991
- Determination of the density of states of the conduction-band tail in amorphous materials: Application to a-Si1−xGex:H alloysPhilosophical Magazine Part B, 1990
- A new treatment of Schottky barrier capacitance-voltage characteristics: Discussion of usual assumptions and determination of the deep gap states density in a-Si1−xGex:H alloysJournal of Non-Crystalline Solids, 1989
- a-Si:H Deposition from SiH4and Si2H6rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge TransitionJapanese Journal of Applied Physics, 1988
- Low Temperature Preparation of Hydrogenated Amorphous Silicon by Microwave Electron-Cyclotron-Resonance Plasma CVDJapanese Journal of Applied Physics, 1987
- Film formation mechanisms in the plasma deposition of hydrogenated amorphous siliconJournal of Applied Physics, 1986
- Enhancement of the plasma density and deposition rate in rf dischargesApplied Physics Letters, 1986
- Effects of inert gas dilution of silane on plasma-deposited a-Si:H filmsApplied Physics Letters, 1981