Formation of AuGe contacts to n-GaAs
- 16 June 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 47 (2) , K183-K185
- https://doi.org/10.1002/pssa.2210470272
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A review of the theory and technology for ohmic contacts to group III–V compound semiconductorsSolid-State Electronics, 1975
- Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAsSolid-State Electronics, 1975
- Determination of semiconductor−metal contact resistance by an angle−dependent geometrical magnetoresistance methodApplied Physics Letters, 1975
- Mechanism of formation of Ohmic contacts to ZnSe, ZnS, and mixed crystals ZnSXSe1−XJournal of Applied Physics, 1974
- New method for producing ideal metal-semiconductor ohmic contactsElectronics Letters, 1974
- Very low resistance NiAuGeNi contacts to n-GaAsSolid-State Electronics, 1974