Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
Top Cited Papers
- 30 November 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (23)
- https://doi.org/10.1063/1.2139841
Abstract
We demonstrate the growth and fabrication of a semipolar (101¯3¯) InGaN∕GaN green (∼525nm) light emitting diode (LED). The fabricated devices demonstrated a low turn-on voltage of 3.2V and a series resistance of 14.3Ω. Electroluminescence measurements on the semipolar LED yielded a reduced blueshifting of the peak emission wavelength with increasing drive current, compared to a reference commercial c-plane LED. On-wafer measurements yielded an approximately linear increase in output power with drive current, with measured values of 19.3 and 264μW at drive currents of 20 and 250mA, respectively. The external quantum efficiency did not decrease appreciably at high currents. Polarization anisotropy was also observed in the electroluminescence from the semipolar green LED, with the strongest emission intensity parallel to the [12¯10] direction. A polarization ratio of 0.32 was obtained at a drive current of 20mA.Keywords
This publication has 14 references indexed in Scilit:
- Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodesApplied Physics Letters, 2005
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN SubstratesJapanese Journal of Applied Physics, 2005
- Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peakApplied Physics Letters, 2004
- Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphireApplied Physics Letters, 2004
- Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wellsJournal of Applied Physics, 2002
- High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopyApplied Physics Letters, 2001
- Built-in electric-field effects in wurtzite AlGaN/GaN quantum wellsJournal of Applied Physics, 1999
- Reduction of oscillator strength due to piezoelectric fields in quantum wellsPhysical Review B, 1998
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997
- Strain effect on electronic and optical properties of GaN/AlGaN quantum-well lasersJournal of Applied Physics, 1996