A reflection high-energy electron diffraction and atomic force microscopy study of the chemical beam epitaxial growth of InAs and InP islands on (001) GaP
- 23 February 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (8) , 954-956
- https://doi.org/10.1063/1.120883
Abstract
We have studied the formation of strained InAs and InP island structures on GaP surfaces grown by chemical beam epitaxy. InP grows pseudomorphically for 3 ML before island crystallization is observed by reflection high-energy electron diffraction, following a typical Stranski–Krastanov growth mode. For the growth of InAs on GaP, three-dimensional diffraction peaks are observed after 0.9 ML of InAs have been deposited, indicating a Volmer–Weber growth mode. Atomic force microscopy studies of these structures are presented and the optical properties are discussed.Keywords
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