Effect of polarization on two-dimensional carrier distribution in nitride quantum wells
- 1 January 2005
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 25 (4) , 449-455
- https://doi.org/10.1016/j.physe.2004.07.014
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Ultraviolet InAlGaN multiple-quantum-well laser diodesPhysica Status Solidi (a), 2003
- Self-Consistent Subband Calculations of AlGaN/GaN Single HeterojunctionsETRI Journal, 2002
- Nonlinear Behavior of Spontaneous and Piezoelectric Polarization in III-V Nitride AlloysPhysica Status Solidi (a), 2002
- Effect of polarization fields on transport properties in AlGaN/GaN heterostructuresJournal of Applied Physics, 2001
- Spontaneous polarization and piezoelectric field in quantum wells: Impact on the optical spectraPhysical Review B, 2000
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997
- Anomalous capacitance–voltage profiles in quantum wells explained by a quantum mechanical modelJournal of Applied Physics, 1997
- Progress and prospects of group-III nitride semiconductorsProgress in Quantum Electronics, 1996
- Conduction-electron spin resonance in zinc-blende GaN thin filmsPhysical Review B, 1993
- Variational calculations on a quantum well in an electric fieldPhysical Review B, 1983