Anomalous capacitance–voltage profiles in quantum wells explained by a quantum mechanical model
- 15 February 1997
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (4) , 2030-2032
- https://doi.org/10.1063/1.364061
Abstract
We have developed a quantum mechanical model for understanding and explaining the capacitance–voltage (C–V) carrier profiles observed in quantum wells (QW). The external field imposed on the QW during C–V profiling changes the carrier distribution of the system. This model considers the effects of field and quantum confinement of the carriers in the well. The results obtained by iterative solutions of Schrodinger’s and Poisson’s equations give a better understanding of the experiments than the previous models where quantum confinement is ignored.This publication has 8 references indexed in Scilit:
- Simulation of capacitance-voltage profiles for the analysis of measurements at a p-type Si-SiGe-Si single quantum wellSemiconductor Science and Technology, 1993
- Cyclotron resonance studies of two-dimensional holes in strained Si1−xGex/Si quantum wellsApplied Physics Letters, 1993
- Variations of resonant tunneling properties with temperature in strained Si1−xGex/Si double-barrier structuresApplied Physics Letters, 1991
- Conduction-band offsets in pseudomorphic As/As quantum wells (0.07≤x≤0.18) measured by deep-level transient spectroscopyPhysical Review B, 1989
- Investigation of the interface region produced by molecular beam epitaxial regrowthJournal of Electronic Materials, 1989
- Variational calculations of subbands in a quantum well with uniform electric field: Gram–Schmidt orthogonalization approachApplied Physics Letters, 1986
- Variational calculations on a quantum well in an electric fieldPhysical Review B, 1983
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980