Argon implantation gettering for a ’’through-oxide’’ arsenic-implanted layer
- 1 October 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (10) , 4404-4406
- https://doi.org/10.1063/1.323398
Abstract
Argon implantation gettering was investigated to improve p‐n junctions made by high‐dose arsenic implantation through oxide film. Arsenic was implanted into p‐type silicon through 520 Å oxide at 2×1015 to 1×1016 cm−2, 100–110 keV. When argon was implanted on the wafer back side at 1×1016 cm−2, 200 keV following arsenic implantation, all junctions showed hard breakdown. However, many junctions without argon implantation showed soft breakdown with large leakage current. Argon implantation reduced etch pits appearing in the arsenic‐implanted region.This publication has 6 references indexed in Scilit:
- Ion Implantation Gettering of Gold in SiliconJournal of the Electrochemical Society, 1976
- High performance MOS integrated circuit using the ion implantation techniqueIEEE Journal of Solid-State Circuits, 1975
- Residual disorder in Si from oxygen recoils in annealed ``through-oxide'' arsenic implantsApplied Physics Letters, 1974
- Ion-implanted semiconductor devicesProceedings of the IEEE, 1974
- Anomalous residual damage in Si after annealing of ``through-oxide'' arsenic implantationsApplied Physics Letters, 1973
- A rutherford scattering study of the diffusion of heavy metal impurities in silicon to ion-damaged surface layersSurface Science, 1973