Emitter and base transit time of polycrystalline silicon emitter contact bipolar transistors
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (11) , 2512-2518
- https://doi.org/10.1109/16.97416
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
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