Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy
- 21 September 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (12) , 1700-1702
- https://doi.org/10.1063/1.122250
Abstract
Visible light emission has been obtained from Er-doped GaN thin films. The GaN was grown by molecular beam epitaxy on sapphire substrates using solid sources (for Ga, Al, and Er) and a plasma gas source for N2. Above GaN band-gap photoexcitation resulted in strong green emission. The emission spectrum consists of two narrow green lines at 537 and 558 nm and a broad peak at light blue wavelengths (480–510 nm). The narrow lines have been identified as Er transitions from the H11/22 and S3/24 levels to the I15/24 ground state. The intensity of the 558 nm emission decreases with increasing temperature, while the intensity of the 537 nm line actually peaks at ∼300 K. This effect is explained based on the thermalization of electrons between the two closely spaced energy levels.This publication has 18 references indexed in Scilit:
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