Controlled passivation of GaAs by Se treatment
- 5 April 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (14) , 1667-1669
- https://doi.org/10.1063/1.109607
Abstract
The passivation of GaAs(100) by Se has been achieved in a controlled manner. Results provided by synchrotron radiation photoelectron spectroscopy show that the extent of Se bonding to As and degree of band bending can be systematically controlled by varying the GaAs substrate temperature during Se exposure. Furthermore, the formation of Ga vacancies is also found to depend on substrate temperature.Keywords
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